Accession Number:

ADA371042

Title:

Electrical and Optical Characterization of Intrinsic and Ion- Implantation Induced Defects in 6H- and 4H-SiC

Descriptive Note:

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSONAFB OH

Personal Author(s):

Report Date:

1999-11-01

Pagination or Media Count:

257.0

Abstract:

Deep level transient spectroscopy DLTS, Hall effect, and cathodolummescence CL measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature 475 and 500 deg C ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiCMg and Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 degrees C. Trap parameters 0 both damage-related and species-related defects are determined by curve-fitting of DLTS rate window plots, including the identification of a 615 meV silicon-vacancy-substitutional-nitrogen defect. Double-correlated DLTS measurements indicate a one-dimensional distribution of various defects along the implantation axis and slight surface diffusion of ion-implanted magnesium during high-temperature annealing. Current-voltage-temperature measurements of 6H-SiCMg Cr indicate the effect of annealing temperature and ion species on the concentration of near midgap defects. Optimum anneal temperatures are determined for activation of ion-implanted nitrogen and phosphorus. CL measurements indicate the formation of deep radiative centers in 500 degrees C ion-implanted 4H-SiCP and N. CL measurements also indicate the presence of a 130 meV higher energy level conduction band minimum.

Subject Categories:

  • Electricity and Magnetism
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE