Accession Number:

ADA370657

Title:

The Progress of Research and Development of Integrated Ferroelectrics

Descriptive Note:

Final rept.

Corporate Author:

ALABAMA UNIV IN HUNTSVILLE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1998-01-01

Pagination or Media Count:

56.0

Abstract:

The progress in terms of processing technology and electrodes for the PZT and SBT ferroelectric capacitors in FERAMs is reported. The key issues addressed for BST films in DRAMs are presented. The ferroelectric materials used in microwave devices are illustrated. Antiferroelectric materials used in microelectro-mechanical systems are briefly discussed. The work in modeling Metal-Ferroelectric-Semiconductor Field Effect Transistor is summarized. It is recommended that the research and development of MFSFETs and their application in nonvolatile memories should be further pursued.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE