Accession Number:

ADA370383

Title:

Photoconductive GaN UV Detectors,

Descriptive Note:

Final rept.,

Corporate Author:

WARSAW UNIV POLAND INST OF EXPERIMENTAL PHYSICS

Personal Author(s):

Report Date:

1999-08-19

Pagination or Media Count:

11.0

Abstract:

This report results from a contract tasking University of Warsaw as follows The contractor will investigate the growth of GaN material using atmospheric pressure metalorganic chemical vapor deposition method MOCVD. The contractor shall develop and optimize Mg doped GaN epitaxial layers which will be able to serve as a base for sensitive photoconductive UV detector. The contractor will grow and perform basic characterization and photoluminescence of the GaN material. Samples will be delivered to Phillips Lab, at Albuquerque NM alter the growth and electrical characterizations were made in the Institute of Experimental Physics at Warsaw, Poland.

Subject Categories:

  • Optical Detection and Detectors
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE