Accession Number:

ADA370287

Title:

PT Spin Dependent Tunneling Sensor

Descriptive Note:

Progress rept.

Corporate Author:

NONVOLATILE ELECTRONICS INC EDEN PRAIRIE MN

Personal Author(s):

• Daughton, James M.
• Nordman, Cathy
• Brownell, Dave
• Reed, Dan

Report Date:

1999-09-30

Pagination or Media Count:

24.0

Abstract:

The purpose of this program is to develop magnetic field sensors using Spin Dependent Tunneling SDT material for use in low field applications 1-100 pT. Presently, low field applications typically require fluxgate magnetometers or SQUID magnetometers. Spin Dependent Tunneling SDT devices offer an order of magnitude improvement in low field sensing over Giant Magnetoresistance GMR sensors due to their intrinsically higher magnetoresistance 20-40 and relatively small saturation fields 2 Oe - 10 Oe. In addition, higher resistance values are relatively easy to attain in small areas, making it possible to have miniaturized devices with low power consumption. The SDT sensors developed under this contract should be very small SOIC-8 package, should require little power, and should be easily combined with other electronics. If the program is successful, the SDT sensors should have distinct advantages in both commercial and military applications.

Descriptors:

• *MAGNETIC FIELDS
• *MAGNETIC DETECTORS
• TUNNELING(ELECTRONICS)
• NOISE REDUCTION
• NOISE(ELECTRICAL AND ELECTROMAGNETIC)
• MAGNETORESISTANCE
• HIGH SENSITIVITY
• MAGNETOMETERS

Subject Categories:

• Magnetic and Electric Field Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE