Accession Number:

ADA370053

Title:

Dynamics of Optical Recombination in GaN and AlxGal-xN

Descriptive Note:

Final rept.,

Corporate Author:

KANSAS STATE UNIV MANHATTAN

Personal Author(s):

• Jiang, Hongxing

Report Date:

1999-08-01

Pagination or Media Count:

8.0

Abstract:

During the project period, we have investigated the optical properties of III-nitride heterostructures and quantum wells and provided input for the improvement of materials quality, understanding of impurity properties, and optimization of device design. We were the first group to observe the persistent photoconductivity PPC effect in p-type GaN epilayers and in AlGaNGaN heterostructures and utilized PPC effect to study the impurity properties in these materials. We were also one of the first few research groups to employ picosecond time-resolved photoluminescence PL measurement technique to study mechanisms of optical transitions, LED emission, and lasing in GaN and related materials.

Descriptors:

• *ELECTROOPTICS
• *QUANTUM WELLS
• *HETEROJUNCTIONS
• *P TYPE SEMICONDUCTORS
• OPTIMIZATION
• TECHNOLOGY TRANSFER
• PHOTOLUMINESCENCE
• IMPURITIES
• HETEROGENEITY
• TRANSITIONS
• RECOMBINATION REACTIONS
• PHOTOCONDUCTIVITY
• GALLIUM NITRIDES
• ALUMINUM NITRIDES

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE