Interfacial Bonding Research for Compliant Substrates.
End-of-Year rept. for 30 Jun 98-1 Jul 99,
PENNSYLVANIA STATE UNIV UNIVERSITY PARK COLL OF ENGINEERING
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This is the second annual progress report. The goal of this project is the improvement of epitaxially grown lattice-mismatched III-V compound semiconductors by development of a practical compliant substrate technology. During the past focused on a GaAs compliant substrate approach using material fabricated by epitaxial growth of an AlAsGaAs structure with the subsequent oxidation of the AlAs. Although we observed changes in surface morphology and a small reduction in x-ray rocking curve linewidths of layers grown on these substrates, we were unable to confirm any significant defect reduction. During the latter part of the year we shifted our focus back to twist-bonded approach.
- Solid State Physics