Accession Number:

ADA364832

Title:

Modeling High Frequency Semiconductor Devices Using Maxwell's Equations

Descriptive Note:

Final rept.

Corporate Author:

ARIZONA STATE UNIV TEMPE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1999-03-01

Pagination or Media Count:

18.0

Abstract:

This is the final report on the research performed at Arizona State University and funded by the Army Research Office. The main theme for this research was investigating and developing new apparoaches to model high-frequency semiconductor devices using physically-based semiconductor device models and Maxwells equations. In this research, we first replaced the conventional semiconductor device models, which are based on Poissons Equation as a semiconductor model, with a new one that uses the full-wave electromagnetic model, derived from Maxwells Equations Solution. We used a complete hydrodynamic model to represent the electron transport physics inside the device. This Model was used to study MM-wave MESFETs and HEMTs. Electromagnetic-wave propagation effects on the transistor performance were analyzed in detail. The newly developed model was used inside a Finite-Difference Time-Domain model to simulate a complete millimeter-wave amplifier. A hybridization technique was used to represent the passive part of the circuit i.e., the matching network and reduce the computational load. We also developed a new hybridization technique for simulating large electromagnetic, it is called Time-Domain Impedance. The developed studies used for optimizing RF components and novel transmission lines. This research resulted in more than 50 publications and presentations. Four Ph.D. degrees were awarded to students supported by this research, who joined industrial companies in U.S.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE