Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN and SiC Thin Films
Quarterly rept. 1 Jan-31 Mar 99
NORTH CAROLINA STATE UNIV AT RALEIGH
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A study of the homoepitaxial growth of GaN0001 layers was conducted in situ and in real time using the low energy electron microscope. An evaporative cell supplied the Ga flux while the NH3 flux was supplied via a seeded beam supersonic jet source. At growth temperatures of 665 deg and 677 deg C, smooth GaN0001 layers with well defined step structures were grown on MOCVD-GaN0001 substrates. In general, non-faceted homoepitaxial layers were achieved when the GaNH3 flux ratios exceeded 2, starting with a Ga covered substrate surface, in the temperature range 655-710 deg C. Preliminary kinetics data for homoepitaxial GaN films grown under Ga stable conditions are consistent with an energy barrier for direct dissociative chemisorption of NH3 on GaN0001 of approximately 0.5 eV.
- Solid State Physics