Accession Number:

ADA361436

Title:

Electrical Characterization of Ion-Implanted 4H-Silicon Carbide

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSONAFB OH

Personal Author(s):

Report Date:

1999-03-01

Pagination or Media Count:

166.0

Abstract:

Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantationannealing scheme. Low doped Na - Nd 5x10exp 15cu cm epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10exp 13 to 1x10exp 14sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect TDHE indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of 252 and 285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of 1650 deg C and 1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10exp 13sq cm. An average peak mobility of 200 sq cm V s was found for an Al implanted sample this is considerably higher than the average peak mobility for the B implanted samples, 100 sq cm V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE