Accession Number:
ADA361436
Title:
Electrical Characterization of Ion-Implanted 4H-Silicon Carbide
Descriptive Note:
Master's thesis
Corporate Author:
AIR FORCE INST OF TECH WRIGHT-PATTERSONAFB OH
Personal Author(s):
Report Date:
1999-03-01
Pagination or Media Count:
166.0
Abstract:
Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantationannealing scheme. Low doped Na - Nd 5x10exp 15cu cm epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10exp 13 to 1x10exp 14sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect TDHE indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of 252 and 285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of 1650 deg C and 1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10exp 13sq cm. An average peak mobility of 200 sq cm V s was found for an Al implanted sample this is considerably higher than the average peak mobility for the B implanted samples, 100 sq cm V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.
Descriptors:
- *ELECTRICAL PROPERTIES
- *ION IMPLANTATION
- *SILICON CARBIDES
- *SOLID STATE ELECTRONICS
- PEAK VALUES
- ANNEALING
- ACTIVATION
- CRYSTAL STRUCTURE
- LAYERS
- HIGH TEMPERATURE
- HALL EFFECT
- THESES
- SODIUM
- ORGANOMETALLIC COMPOUNDS
- CHEMICAL VAPOR DEPOSITION
- EPITAXIAL GROWTH
- CRYSTALLIZATION
- ROOM TEMPERATURE
- ALUMINUM
- IONIZATION
- DOPING
- N TYPE SEMICONDUCTORS
- ELECTRON ACCEPTORS
- BORON
- NEODYMIUM
- P TYPE SEMICONDUCTORS
- ELECTRON MOBILITY
- WIDE GAP SEMICONDUCTORS
Subject Categories:
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Solid State Physics