DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADA361436
Title:
Electrical Characterization of Ion-Implanted 4H-Silicon Carbide
Descriptive Note:
Master's thesis
Corporate Author:
AIR FORCE INST OF TECH WRIGHT-PATTERSONAFB OH
Report Date:
1999-03-01
Pagination or Media Count:
166.0
Abstract:
Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantationannealing scheme. Low doped Na - Nd 5x10exp 15cu cm epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10exp 13 to 1x10exp 14sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect TDHE indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of 252 and 285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of 1650 deg C and 1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10exp 13sq cm. An average peak mobility of 200 sq cm V s was found for an Al implanted sample this is considerably higher than the average peak mobility for the B implanted samples, 100 sq cm V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE