Band-Bending Effect of Low-Temperature GaAs on a Pseudomorphic Modulation-Doped Field-Effect Transistor
Final rept. 1 Jun 98-15 Jan 99
ARMY RESEARCH LAB ADELPHI MD
Pagination or Media Count:
Low-temperature photoluminescence PL measurements on pseudomorphic modulation-doped transistors with a low-temperature LT GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum-wellPL transition energies compared to a structure with no LT GaAs. Self-consistent calculations of the electron and hole band structure confirm that the observed increase in the redshift in PL energies with increasing quantum-wellLT-GaAs spacing can be attributed to band bending induced by the Fermi level pinning at the undoped-GaAsLT-GaAs interface.
- Electrical and Electronic Equipment
- Solid State Physics