Accession Number:

ADA361412

Title:

Band-Bending Effect of Low-Temperature GaAs on a Pseudomorphic Modulation-Doped Field-Effect Transistor

Descriptive Note:

Final rept. 1 Jun 98-15 Jan 99

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Report Date:

1999-03-01

Pagination or Media Count:

16.0

Abstract:

Low-temperature photoluminescence PL measurements on pseudomorphic modulation-doped transistors with a low-temperature LT GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum-wellPL transition energies compared to a structure with no LT GaAs. Self-consistent calculations of the electron and hole band structure confirm that the observed increase in the redshift in PL energies with increasing quantum-wellLT-GaAs spacing can be attributed to band bending induced by the Fermi level pinning at the undoped-GaAsLT-GaAs interface.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE