Accession Number:

ADA359538

Title:

Heterostructures (CaSrBa)F2 on InP for Optoelectronics

Descriptive Note:

Final rept.

Corporate Author:

MOLDOVA ACADEMY OF SCIENCES KISHINEV INST OF APPLIED PHYSICS

Personal Author(s):

Report Date:

1995-01-01

Pagination or Media Count:

23.0

Abstract:

Temperature-reduced MBE growth of group II-a fluorides onto InP 100 surface as well as optimal cleaning and passivation procedures for InP wafers have been newly developed taking into account exsisting literature data. High quality BaF2 and SrF2 layers onto InP100 have been grown at 350 deg C under ultra-high vacuum conditions using epitaxial and bulk substrates. MBE and Laser Vacuum Epitaxy LVE growth methods for semiconductor-semiconductor SS and semiconductor-crystalline dielectric-semiconductor heterostructures are considered as well as experimental facilities for these processes are elaborated.

Subject Categories:

  • Solid State Physics
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE