Growth and Characterization of Bulk Silicon Carbide for Electronics, Microwave Applications, and Optical Applications
UKRAINIAN SSR ACADEMY OF SCIENCES KIEV
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This report results from a contract tasking Academy of Scences of the Ukraine as follows Grow both 6H and I 5R SiC using the Lely growth technique or other appropriate techniques as described in the attached proposal dated 22 July 1994. The SiC will be characterized by structural, physical and chemical analysis.
- Inorganic Chemistry
- Physical Chemistry
- Electrical and Electronic Equipment