Growth and Fabrication of GaN-Based Heterojunction Bipolar Transistors
Annual rept.1 Jan-31 Dec 98
GEORGIA INST OF TECH ATLANTA SCHOOL OFELECTRICAL AND COMPUTER ENGINEERING
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GaN HBTs are promising for microwave power applications but face numerous technology barriers. In this project, we are addressing the enhancement of the hole concentration in p-type GaN by piezoelectric effects andor the use of superlattices. We are currently assessing the activity of Mg-doped GaN on sapphire and lithium gallate as grown by MBE. In addition, we are modeling these effects to optimize the hole concentration in realistic HBT structures.
- Inorganic Chemistry
- Electrical and Electronic Equipment