Accession Number:

ADA359392

Title:

Growth and Fabrication of GaN-Based Heterojunction Bipolar Transistors

Descriptive Note:

Annual rept.1 Jan-31 Dec 98

Corporate Author:

GEORGIA INST OF TECH ATLANTA SCHOOL OFELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1999-01-25

Pagination or Media Count:

8.0

Abstract:

GaN HBTs are promising for microwave power applications but face numerous technology barriers. In this project, we are addressing the enhancement of the hole concentration in p-type GaN by piezoelectric effects andor the use of superlattices. We are currently assessing the activity of Mg-doped GaN on sapphire and lithium gallate as grown by MBE. In addition, we are modeling these effects to optimize the hole concentration in realistic HBT structures.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE