European Conference on Silicon Carbide and Related Materials (2nd), Held in Montpeller, France on September 2-4, 1998
MONTPELLIER UNIV (FRANCE)
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Partial Contents 1 Progress in SiC from material growth to commercial device development 2 Advances in SiC materials and devices an industrial point of view 3 State of the art in the modelling of SiC sublimation growth 4 Mathematical simulation of mass transfer, thermal transfer, and stress formation under silicon carbide boules growth 5 Transport phenomena during sublimation growth of bulk SiC crystals 6 Near-thermal equilibrium growth of SiC by physical vapor transport 7 Analysis on defect generation during the SiC bulk growth process 8 Prospects in the use of liquid phase techniques for the growth of bulk silicon carbide crystals 9 Seeded sublimation growth at 6H and 4H-SiC crystals 10 Influence of reactor cleanness and process condition on the growth by PVT and the purity of 4H and 6H-SIC crystals.
- Inorganic Chemistry