Accession Number:

ADA359225

Title:

European Conference on Silicon Carbide and Related Materials (2nd), Held in Montpeller, France on September 2-4, 1998

Descriptive Note:

Corporate Author:

MONTPELLIER UNIV (FRANCE)

Personal Author(s):

Report Date:

1998-09-04

Pagination or Media Count:

318.0

Abstract:

Partial Contents 1 Progress in SiC from material growth to commercial device development 2 Advances in SiC materials and devices an industrial point of view 3 State of the art in the modelling of SiC sublimation growth 4 Mathematical simulation of mass transfer, thermal transfer, and stress formation under silicon carbide boules growth 5 Transport phenomena during sublimation growth of bulk SiC crystals 6 Near-thermal equilibrium growth of SiC by physical vapor transport 7 Analysis on defect generation during the SiC bulk growth process 8 Prospects in the use of liquid phase techniques for the growth of bulk silicon carbide crystals 9 Seeded sublimation growth at 6H and 4H-SiC crystals 10 Influence of reactor cleanness and process condition on the growth by PVT and the purity of 4H and 6H-SIC crystals.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE