Accession Number:

ADA359099

Title:

Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers

Descriptive Note:

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Personal Author(s):

Report Date:

1998-01-01

Pagination or Media Count:

5.0

Abstract:

It has been suggested that once silicon carbide SiC technology overcomes some crystal growth obstades, superior SiC semiconductor devices will supplant silicon in many high power applications. However, a positive temperature coefficient of breakdown voltage, a feature crucial to realizing excellent power device reliability, has not been observed in 4H-SiC, which is presently the best-suited SiC polytype for power device implementation. This paper reports the first experimental measurements of stable positive temperature coefficient behavior observed in 4H-SiC pn junction rectifiers. This research indicates that robust 4H-SiC power devices with high breakdown reliability should be achievable after SiC foundries reduce material defects such as micropipes, dislocations, and deep-level impurities.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE