Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers
ARMY RESEARCH LAB ADELPHI MD
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It has been suggested that once silicon carbide SiC technology overcomes some crystal growth obstades, superior SiC semiconductor devices will supplant silicon in many high power applications. However, a positive temperature coefficient of breakdown voltage, a feature crucial to realizing excellent power device reliability, has not been observed in 4H-SiC, which is presently the best-suited SiC polytype for power device implementation. This paper reports the first experimental measurements of stable positive temperature coefficient behavior observed in 4H-SiC pn junction rectifiers. This research indicates that robust 4H-SiC power devices with high breakdown reliability should be achievable after SiC foundries reduce material defects such as micropipes, dislocations, and deep-level impurities.
- Electrical and Electronic Equipment
- Solid State Physics