Accession Number:

ADA357987

Title:

Improving VCSEL's & Rare-Earth-Doped Led's.

Descriptive Note:

Final rept. 1 Sep 95-31 Aug 98,

Corporate Author:

ARIZONA UNIV TUCSON

Personal Author(s):

Report Date:

1998-11-11

Pagination or Media Count:

20.0

Abstract:

The possibility of enhancing the luminescence efficiency of Er ions embedded in a semiconductor was investigated by growing about forty erbium-doped lnGaAsGaAs and GaAsAlGaAs multiple quantum well samples by molecular beam epitaxy. The idea was to enhance the semiconductor-to- erbium transfer by tuning the quantum-well transition energy to equal one of the erbium ion transitions. Although photoluminescence was seen up to room temperature, strong diffusion of erbium and interdiffusion of Ga and Al ions degraded the quantum wells and formed Er traps that differ by positions of fine structure lines, photoluminescence lifetimes, and temperature dependences.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE