Electro-Optics Based on Novel Materials Modifications
Final progress rept. 1 Jun 95-31 May 98
HRL LABS LLC MALIBU CA
Pagination or Media Count:
Aims or goals of this work included growth, doping and characterization of new materials of interest to ARO for electro-optics and electronics applications within the DoD, often involving support for university research through collaborative programs initiated by Dr. John Zavada. A concomitant goal was the publication of papers that describe the results of this work and these collaborations. Results and significance of this work are described in the publications listed at the end of this report. Included are successful growth of Er-doped grown and implanted nitrides and 1.54-mm stimulated light emission characterization of p-and n-type commercial SiC characterization of SiGeC and GeC films and oxidized AlN films for ARO applications and measurement of the stability and of H and its diffusion in ScAlMgO4, SiC, LiAlO2, and LiGaO2, all substrate for III-nitrides growth, especially GaN stability of hydrogen in 6H and 3C SiC work with SiGeC and GeC characterization of III-nitrides grown in a variety of laboratories and stimulated emission of 1.5-mm light from Er doping of all such materials, for optical communications systems applications band edge luminescence measurements and PL measurements.
- Electrooptical and Optoelectronic Devices
- Solid State Physics