Accession Number:

ADA350195

Title:

Infrared Applications of Semiconductors II: Symposium Held in Boston, Massachusetts on December 1-4, 1997

Descriptive Note:

Final rept. 15 Oct 97-14 Oct 98

Corporate Author:

MATERIALS RESEARCH SOCIETY WARRENDALE PA

Report Date:

1997-12-01

Pagination or Media Count:

679.0

Abstract:

A variety of semiconductor materials have been used to fabricate diode lasers for the mid-infrared. Lasers using the lead salts e.g., PbSnTe have been commercially available for sometime. Mid-infrared emitting III-V semiconductors e.g., InGaAsSb have superior thermal conductivity, and diode lasers fabricated from these material offer higher powers, of particular interest are the III-V semiconductor laser based on type-II superlattices e.g., InAsGaInSb. Among the many unique properties attributed to type-II superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption-all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.

Subject Categories:

  • Inorganic Chemistry
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE