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International Conference on Defects in Semiconductors (19th), ICDS-19, Held in Aveiro, Portugal on 21-25 July 1997, Part 2
AVEIRO UNIV (PORTUGAL)
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The Final Proceedings for International Conference of Defects in Semiconductors, 21 July 1997 - 25 July 1997 Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps, semiconductors silicon and III-V materials, plus radiation effects on detector materials. Topics will also include 1 GaN, 2 Nanostructures, 3 Large bandgap materials, 4 defects in Epitaxial growth, 5 self-organizing rare earth, 6 metastable defects, 7 pairs and complexes, 8 defect reactions, and 9 radiation effects on detector material.
APPROVED FOR PUBLIC RELEASE