Accession Number:

ADA349484

Title:

International Conference on Defects in Semiconductors (19th), ICDS-19, Held in Aveiro, Portugal on 21-25 July 1997, Part 2

Descriptive Note:

Corporate Author:

AVEIRO UNIV (PORTUGAL)

Personal Author(s):

• Davies, Gordon
• Nazare, Maria H.

Report Date:

1998-01-23

Pagination or Media Count:

615.0

Abstract:

The Final Proceedings for International Conference of Defects in Semiconductors, 21 July 1997 - 25 July 1997 Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps, semiconductors silicon and III-V materials, plus radiation effects on detector materials. Topics will also include 1 GaN, 2 Nanostructures, 3 Large bandgap materials, 4 defects in Epitaxial growth, 5 self-organizing rare earth, 6 metastable defects, 7 pairs and complexes, 8 defect reactions, and 9 radiation effects on detector material.

Descriptors:

• *SEMICONDUCTORS
• *DEFECTS(MATERIALS)
• SYMPOSIA
• OPTIMIZATION
• DETECTORS
• COMPOSITE MATERIALS
• QUANTUM THEORY
• EPITAXIAL GROWTH
• SILICON
• BROADBAND
• GROUP III COMPOUNDS
• GROUP IV COMPOUNDS
• GROUP V COMPOUNDS
• RARE EARTH ELEMENTS
• METASTABLE STATE
• RADIATION EFFECTS
• PORTUGAL
• SELF ORGANIZING SYSTEMS
• GALLIUM NITRIDES

Subject Categories:

• Laminates and Composite Materials

Distribution Statement:

APPROVED FOR PUBLIC RELEASE