Accession Number:

ADA349474

Title:

International Conference of Defects in Semiconductors (19th), ICDS, Held in Aveiro, Portugal on July 21-25, 1997, Pt. 3

Descriptive Note:

Corporate Author:

AVEIRO UNIV (PORTUGAL)

Personal Author(s):

Report Date:

1998-01-23

Pagination or Media Count:

573.0

Abstract:

The Final Proceedings for International Conference of Defects in Semiconductors, 21 July 1997 - 25 July 1997 Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps, semiconductors silicon and III-V materials, plus radiation effects on detector materials. Topics will also include 1 GaN, 2 Nanostructures, 3 Large bandgap materials, 4 defects in Epitaxial growth, 5 self-organizing rare earth, 6 metastable defects, 7 pairs and complexes, 8 defect reactions, and 9 radiation effects on detector material.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE