Accession Number:

ADA347808

Title:

Electronic Transport in Semiconductor Heterostructures and in Mesoscopic Systems

Descriptive Note:

Final rept.

Corporate Author:

ILLINOIS UNIV AT URBANA-CAMPAIGN BECKMAN INST FOR ADVANCED SCIENCES AND TECHNOLOGY

Personal Author(s):

Report Date:

1998-01-01

Pagination or Media Count:

5.0

Abstract:

Much of the work in the past three years has concentrated on creating a predictive simulation tool for edge emitting semiconductor quantum well laser diodes. This simulator MINILASE II has been completed and has been compared to modulation response experiments from the Santa Barbara group. Modulation response has been chosen because it is the most difficult characteristic to predict since nonlinearities enter in a crucial way. The close agreement between experimental and simulation results that is described in publication 15 has necessitated a careful treatment of the device physics i We have included an 8 band k.p bandstructure including the effects of strain. The effects of bandstructure are twofold. It had already been known that bandstructure determines the optical matrix element and therefore is crucial to obtain correct values for optical absorption, spontaneous emission and stimulated emission. Our self-consistent simulator has shown however, that of equal importance is the non-parabolicity which effects the location of the quasi-Fermi levels and therefore the gain. Only a complete simulator such as MINILASE II can show this with all its quantitative aspects.

Subject Categories:

  • Lasers and Masers
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE