Accession Number:

ADA347785

Title:

Development of Novel, Band-Gap Engineered Photorefractive Semiconductors CdMnTe:V For Real Time Optical Processing

Descriptive Note:

Final rept. Jul 95-Jul 96

Corporate Author:

BRIMROSE CORP OF AMERICA BALTIMORE MD

Report Date:

1998-06-01

Pagination or Media Count:

34.0

Abstract:

During this project, we have developed and produced application quality photorefractive Cd1-xMnxTeV crystals with compositions x 0.15, 0.45, and 0.60. These crystals are useful for applications in the wavelength range of 0.7 to 1.3mm. These crystals were obtained through the following material processing steps 1 extensive purification of the starting elements cadmium, manganese and tellurium and purification if the compound Cd1-xMnxTe 2 crystal growth from the melt under controlled conditions of heat and mass transfers and 3 in situ annealing of the crystals after growth. The optimal temperature profile required to produce a favorable growth interface and minimal stress for crystals grown by the Bridgman- Stockbarger method was determined. From computational models, the temperature distribution within the solid and melt in the growth ampoule was calculated and used to construct an improved experimental system for growth of high quality Cd1-xMnxTeV single crystals.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE