Accession Number:

ADA343699

Title:

Fabrication of AlN Thin Film Substrates by 'Van Der Waals Lift-Off Technique'

Descriptive Note:

Final rept. 1 Feb 95-31 Jan 98

Corporate Author:

WASHINGTON UNIV SEATTLE

Personal Author(s):

Report Date:

1998-04-29

Pagination or Media Count:

51.0

Abstract:

The goal of the project was to develop a method to fabricate a free aluminum nitride AlN thin films. This was developed by growing AlN thin films on top of layered tungsten sulfide WS2 thin films which were deposited on a mechanically rigid substrate material such as Si and Al2O3, followed by mechanical separation of AlN thin films thorough the inter-layers of WS2. This project involved the design and construction of a cold wall metal organic chemical vapor deposition MOCVD for WS2 thin films, and the AlN thin film deposition by atomic layer growth ALG process. WS2 thin films were deposited using the reaction of H2S with WCO6. Microstructure for WS2 thin films is generally characterized by the formation of crystallites with basal planes parallel to the interface for the first few tens of nanometers, followed by the formation of crystallites with their basal planes non-parallel to the substrate. Process conditions to grow AlN thin films via ALG using dimethylamine-alane DMEAA and ammonia NH3 were investigated. Close proximity of the lattice constant of WS2 to those of AlN lead to a potential application of this materials as a substrate for subsequent growth of AlN, however, the lift-off process was severely dependent on the microstructure of WS2 interlayers.

Subject Categories:

  • Inorganic Chemistry
  • Laminates and Composite Materials
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE