Accession Number:

ADA343497

Title:

Blue/UV Emitting GaN Laser

Descriptive Note:

In-house rept. Oct 96-Dec 97

Corporate Author:

ROME LAB ROME NY

Personal Author(s):

Report Date:

1998-04-01

Pagination or Media Count:

39.0

Abstract:

This report presents results from an epitaxial growth study of Gallium Nitride GaN for use as ultraviolet UV and blue laser diodes and light emitting diodes LEDs. The method of growth investigated was Molecular Beam Epitaxy MBE. The group V source was nitrogen gas that was cracked utilizing a 13.56 MHz Radio Frequency RF plasma source. From this RF plasma, sufficient atomic nitrogen was produced to obtain growth rates of GaN of 0.65 micrometershr. Both n- and p-type wurtzite GaN was grown on basal plane sapphire substrates. In addition, results from growth attempts on cubic-SiC substrates is described. Results from photoluminescence spectroscopy PL, Hall effect measurements, and Atomic Force Microscopy AFM of samples are shown and their effect on resulting changes in the growth recipe. Finally, results from the growth of AlxGa1-xN.

Subject Categories:

  • Inorganic Chemistry
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE