A Theoretical Probe into the Electronic, Geometric, and Dynamic Properties of Semiconductors
Annual rept. 1 Mar 97-28 Feb 98
MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
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For the past several years there has been a major international effort on the heteroepitaxial growth of compound tetrahedrally coordinated semiconductors on Si substrates by MBE, MOCVD, etc. on the fabrication of devices and circuits in these layers and on the monolithic integration of such components with Si circuits fabricated on the same wafer. This effort is based on the significant potential that epitaxial growth of dissimilar semiconductor materials holds for technological applications. Nevertheless, relatively little theoretical work has been performed to understand the fundamental interactions and global issues governing the initial stages of growth and the structure of the first few mono-layers in these systems.
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