Accession Number:

ADA341576

Title:

Engineered Semiconductor Nanostructures for Enhanced Nonlinear Optical Properties in the Infrared.

Descriptive Note:

Final technical rept. Aug 92-Dec 97,

Corporate Author:

ROCHESTER UNIV NY DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1998-03-26

Pagination or Media Count:

6.0

Abstract:

GaAs and InGaAs superlattices have been grown by molecular beam epitaxy. Doping was done either in the quantum wells or throughout the superlattices. The quantum wells were first characterized by conventional methods such as PL, FTIR, or Raman spectroscopy. The free electron laser or another subpicosecond laser source tunable in the mid-infrared was used to perform second harmonic generation SHG measurements and differential transmission measurements using the pump-probe configuration. The results were analyzed using the simplest realistic models available in the literature as well as the most advanced numerical models through collaborations. All measurements were performed in the 3-5 m spectrum region. We have measured for the first time 1 SHG enhancement on resonance with intersubband transitions in the valence band, 2 the hot hole relaxation in p-type quantum wells, and 3 the hot electron relaxation in n-type quantum wells.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electrooptical and Optoelectronic Devices
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE