Violet/Ultraviolet Semiconductor Injection Lasers Using GaN-Based Materials
Final rept. Jan 96-Jan 97
CORNELL UNIV ITHACA NY
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The GaN material system was examined for the growth of semiconductor injection lasers for high density optical interconnect applications. The effort focused on the growth, via molecular beam epitaxy, of GaN buffers and epitaxial layers on sapphire substrates. Substrate temperature, growth rate, and nitrogen power and flow rate were varied during buffer and epilayer growth to determine optimal parameters. RGA source pressures, RHEED, and substrate temperature, were monitored during growth, followed by mobility, photoluminescence, and X-ray measurements for good samples. The best recipe involved low temperature, low buffer growth rate followed by high temperature buffer anneal, followed by higher temperature, high mobility quality epilayer growth. Mobilities as high as 200 sq cmV sec were measured. However, due to the lack of a matching substrate, the high defect densities obtained precluded the demonstration of a lasing structure.
- Lasers and Masers