Accession Number:

ADA341475

Title:

Energy Assisted Epitaxy of GaN Using a Low Flux Nitrogen Atom Source

Descriptive Note:

Corporate Author:

WEST VIRGINIA UNIV RESEARCH CORP MORGANTOWN*

Personal Author(s):

Report Date:

1997-10-01

Pagination or Media Count:

163.0

Abstract:

This grant was issued under the Department of Defense Experimental Program to Stimulate Competitive Research as part of a national effort to develop nationally competitive programs in states which have historically not been successful at obtaining Federal Funding for independent research. In addition, the grant provided funding to both conduct research and to educate scientists and engineers in areas important to national defense. The grant was successful in all three areas. As detailed in this report, we have performed high quality research on fundamental issues of growth in GaN, a strategic material, in addition to training many students. Finally, a nationally competitive program was established as evidenced by the award of a regular ONR grant, An Investigation of the Effects of Hydrogen on Growth Kinetics and Defect Formation in Group III-Nitride Semiconductors, ONR-N00014-96-1-1008 as a direct offshoot of research performed on this grant.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Military Operations, Strategy and Tactics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE