Accession Number:

ADA339255

Title:

Analysis of Ferroelectric Thin Films Grown by MOD Process

Descriptive Note:

Progress rept. Jul 96-Jul 97

Corporate Author:

RAYTHEON TI SYSTEMS DALLAS TX

Personal Author(s):

Report Date:

1998-02-01

Pagination or Media Count:

18.0

Abstract:

The Army Research Laboratory ARL has performed ferroelectric characterization testing of thin film ferroelectric samples provided by Raytheon TI Systems RTIS for the DARPA Defense Advanced Research Projects Agency uncooled detector materials program. The samples measured at ARL, produced by the metal-organic decomposition MOD method, have hysteresis loop characteristics, remanant polarization, and dielectric constant and resistivity values commensurate with measurements made at RTlS. RTlS projections show that Ca- and Sn-doped samples should achieve a projected noise equivalent temperature difference NETD of 13.8 mK with 48.5-micrometers pixels and 26.5 mK with 50-micrometers pixels, respectively.

Subject Categories:

  • Organic Chemistry
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE