Accession Number:

ADA339185

Title:

Final Technical Report for AFOSR Grant #F49620-97-1-0261

Descriptive Note:

Final rept. May-Oct 97

Corporate Author:

ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1998-02-01

Pagination or Media Count:

7.0

Abstract:

Research conducted under AFOSR grant no. F49620-97-l-026l focused on exploring the properties of microdischarge devices fabricated in silicon. Cylindrical devices having diameters between 20 micrometers and 400 micrometers have been fabricated and intense emission on the B -- X transition of xenon monoiodide XeI in the ultraviolet UV is produced when mixtures of XeI2 are introduced to the discharge. Having specific power loadings beyond 100 kW-cu cm on a continuous basis, these devices represent a new realm of discharge operation and are attractive candidates as lamps or for the decomposition of environmentally hazardous gases.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE