Computer Simulations of Growth Phenomena on Solid Surfaces.
Final rept. 1 Nov 94-31 Oct 97,
CALIFORNIA UNIV SANTA BARBARA
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Our work provides an understanding of epitaxial growth at the atomic level and develops new phenomenological theories describing epitaxy on large space and time scales. It is hoped that a better understanding of crystal growth will allow us to optimize performance of solid state electronic devices and perhaps suggest how to grow new structures with new functions. During this funding period we have focused our efforts on understanding two-dimensional growth in which the posited material spreads rapidly on the surface and the crystal is grown layer-by-layer. We have proposed a new mechanism for surfactant action proposed a set kinetic mechanism for the early stage of Si deposition on Si100, and have elucidated the mechanism of island-shape changes. We have shown that the growth of heterogeneous systems is very complex and requires shape-dependent diffusion constants. We have performed thermodynamic and kinetic studies of the mean island shape and its surface tension. We have proposed a new thermodynamic theory of evaporation rate. We have clarified many aspects of the coarsening process and made some advances in the theory of rate constants.