Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH DEPT OF ENGINEERING PHYSICS
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Shockley-Read-Hall, radiative, and Auger recombination rates in mid-infrared laser structures are measured and reported using time resolved photoluminescence TRPL frequency upconversion. The mid-IR lasers studied were actual InAsSbInAlAsSb multiple-quantum-well MQW diode lasers emitting near 3.3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature 77 K were measured and found to be Asub SRH approx.10 x 10exp 7sec, Bsub rad approx. 2 x 10exp -10 cu cmsec and Csub Auger 10exp -29 cmexp 6s respectively, for each sample measured. At higher temperatures 150 K, the recombination rates were measured to be A sub SRH approx. 40 x 10exp 7sec Bsub rad approx. 0.78 x 10exp -10 cu cmsec and Csub Auger 7.0 x 10exp -28 cmexp 6s respectively. The Auger coefficient reported here is significantly lower than previous reports on similar material from both theoretical and experimental investigations. This has significant implications for mid-IR laser research, in that Auger may not be the limiting problem.
- Inorganic Chemistry
- Lasers and Masers
- Quantum Theory and Relativity