Accession Number:

ADA336389

Title:

Ultralow Threshold Microlasers.

Descriptive Note:

Final rept. 01 Jul 96-31 Oct 97,

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES

Personal Author(s):

Report Date:

1997-10-01

Pagination or Media Count:

20.0

Abstract:

This final technical report summarizes advances to push the limits of ultralow threshold microlaser VCSEL design implementation, and performance. The main results are summarized 1 Values of spontaneous emission coupling factor Bbeta in the range between 10exp -2 and 10exp -1 lead to comparatively low turn-on delay for both on-on and on-off modulation. Spontaneous emission factors lying between 10exp -2 and 10exp -1 are more attractive than devices with B approx. 1. 2 With reduction of aperture size to less than 5x5 sq micrometers. the internal quantum efficiency decreases owing to carrier losses resulting from current spreading and carrier out-diffusion, the round-trip loss increases due to excess diffraction and scattering losses. 3 Modal noise and speckle visibility in Gbs multimode waveguide interconnect systems depends on a complex interplay of carrier dynamics, spontaneous emission factor, gain compression, and device dimensions. Scaled low-power microlasers exhibit modal noise comparable to large incoherent multimode devices. 4 The series resistance of microlasers has been explored by fabricating low resistance, low-threshold current, and intracavity-contacted devices.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE