Accession Number:

ADA335326

Title:

International Conference on Indium Phosphide and Related Materials, Held in Cape Cod, Massachusetts, on 11 - 15 May 1997.

Descriptive Note:

Final rept.

Corporate Author:

INSTITUTE OF ELECTRICAL AND ELECTRONICSENGINEERS INC PISCATAWAY NJ

Personal Author(s):

Report Date:

1998-01-14

Pagination or Media Count:

695.0

Abstract:

Partial contents Plenary Session - PLEN1 InP-Based Components for Telecom Systems in Europe PLEN2 Advanced in InP-Based Optoelectronic Devices and Circuits for Optical Communication, Interconnection and Signal Processing PLEN3 Unipolar Mid-Infrared Semiconductor Lasers MA Power Devices - MA1 Bandgap Engineered InP-Based Power Double Heterojunction Bipolar Transistor MA2 0.9Wmm, 76 PAE 7GHz GaInAsInP Composite Channel HEMTS MA3 High Power InAlAsInGaAsInP-HFET Grown by MOVPE MA4 InPInGaAs Double HBTs with High CW Power Density at 10 GHz.

Subject Categories:

  • Inorganic Chemistry
  • Lasers and Masers
  • Electrooptical and Optoelectronic Devices
  • Laminates and Composite Materials

Distribution Statement:

APPROVED FOR PUBLIC RELEASE