Accession Number:

ADA334735

Title:

Heteroepitaxy of SiGeC on Si

Descriptive Note:

Final rept. 30 Jun 94-29 Jun 97

Corporate Author:

ARIZONA STATE UNIV TEMPE

Personal Author(s):

• Mayer, James W.

Report Date:

1997-12-08

Pagination or Media Count:

4.0

Abstract:

Pseudomorphic alloys of Si1-x-y GexCy, with compositions ranging from x approx. 0.20 and 0.01 or y or 0.002 to x approx. 0.50 and 0.02 or y 0.04 were grown by chemical vapor deposition. Films with the lower alloy compositions were grown to thickness of 750 nm without the formation of misfit dislocations at the filmsubstrate interface. This is a four fold increase of the critical thickness over carbon-free alloys with similar SiGe ratios. High resolution x-ray diffraction analysis showed all of the pseudomorphic films grown in this study to be in compression. Calculations based on Vegards law suggested that about 50 of the carbon is compensating for strain induced by the germanium.

Descriptors:

• *EPITAXIAL GROWTH
• *ALLOYS
• *SILICON
• COMPRESSION
• THICKNESS
• INTERFACES
• X RAY DIFFRACTION
• FILMS
• CHEMICAL VAPOR DEPOSITION
• SUBSTRATES
• CARBON
• HIGH RESOLUTION
• CHEMICAL COMPOSITION
• DISLOCATIONS
• GERMANIUM

Subject Categories:

• Inorganic Chemistry
• Properties of Metals and Alloys

Distribution Statement:

APPROVED FOR PUBLIC RELEASE