Accession Number:

ADA331054

Title:

Electrochemical Atomic Layer Epitaxy

Descriptive Note:

Technical rept. May 96-Sep 97

Corporate Author:

GEORGIA UNIV ATHENS DEPT OF CHEMISTRY

Personal Author(s):

• Stickney, John L.

Report Date:

1997-10-16

Pagination or Media Count:

206.0

Abstract:

This is a review of work performed in the P.I.s laboratory concerning development of the method of electrochemical atomic layer epitaxy. It includes an introduction covering compound semiconductor electrodeposition, with a table containing about 400 references. It contains a chapter on thin layer electrochemical studies, which are frequently used to get an initial idea of the conditions that should be used in an automated deposition cycle. There is a section on the development of the automated flow deposition system, and the growth of thin films of CdTe. There is a section on the atomic level characterization of these films using surface analytical methods. There is a section on the inverse of electrochemical ALE, digital etching. In those studies atomic layers are removed one at a time. There is also a conclusions section describing here we feel these techniques are going.

Descriptors:

• *ELECTROCHEMISTRY
• *SEMICONDUCTORS
• *ATOMIC LAYER EPITAXY
• DIGITAL SYSTEMS
• AUTOMATION
• LAYERS
• THIN FILMS
• EPITAXIAL GROWTH
• ETCHING
• CYCLES
• SURFACES
• DEPOSITION
• CADMIUM TELLURIDES
• FLOW
• ATOMIC ENERGY LEVELS
• ELECTRODEPOSITION

Subject Categories:

• Physical Chemistry
• Fabrication Metallurgy
• Crystallography
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE