Accession Number:

ADA329816

Title:

Development of Advanced Electronic Materials and Devices for Ultra-Low 1/f Noise and Low Leakage Current Applications

Descriptive Note:

Final rept. 1 Jun 94-31 May 97

Corporate Author:

MISSOURI UNIV-ST LOUIS DEPT OF PHYSICS

Personal Author(s):

Report Date:

1997-07-15

Pagination or Media Count:

39.0

Abstract:

This report contains practical applications of the Quantum 1f Effect, theory development, and contributions not directly based on quantum 1f noise. The application to quartz resonators was improved by the inclusion of crystal defects in the calculation, and was generalized to the case of low-Q and SAW devices. The generalization is important, introducing the notion of incoherence between quantum 1f fluctuations of the phonon loss rate in various regions of the crystal. The applications also include calculation of quantum 1f noise in gallium nitride. It is 3-10 times lower in GaN than in GaAs. The theory was reformulated on the basis of the new negative conditional quantum entropy concept explaining the apparent entropy production in 1f noise by simultaneous production of negative-entropy soft photon states. A long-standing conceptual difficulty is eliminated on this basis of tremendous importance is the discovery during this grant of a new method connecting the coherent and conventional quantum 1f effects. A mass distribution was found which allows to find the quantum 1f noise in general. A method of gate current suppression in HFET and a two-dimensional all-optical TDM system were studied.

Subject Categories:

  • Line, Surface and Bulk Acoustic Wave Devices
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE