Accession Number:
ADA329786
Title:
Resonant Tunneling and Hot Electron Spectroscopy in Buried Rare-Earth Arsenide/Semiconductor Heterostructures.
Descriptive Note:
Final rept. 1 May 93-30 Apr 97,
Corporate Author:
CALIFORNIA UNIV SANTA BARBARA
Personal Author(s):
Report Date:
1997-04-30
Pagination or Media Count:
7.0
Abstract:
A new materials arena has been opened for quantum electron transport devices based on magnetic, semi-metal compound semiconductor heterostructures. Epitaxial ultrathin films of a rare earth arsenide, ErAs, were grown in GaAs semiconductors. The dissimilarities between the ErAs, a magnetic semimetal, and the compound semiconductor make possible the fabrication of three terminal resonant tunneling transistors with ultra thin semi-metal quantum wells. Resonant tunneling through semi-metal quantum wells was observed for the first time. A strong coupling of the magnetization and the resonant tunneling was discovered that demonstrates magnetization controlled resonant tunneling. Nano-composites of ErAs GaAs were also grown. Electron transport in these systems exhibits giant magneto-resistance, magnetization controlled island to island electron hopping transport. This research program has opened the possibility of high density, non-volatile information storage and processing based on magnetic, semi-metallic, quantum structures grown and integrated into compound semiconductor heterostructures.
Descriptors:
- *HETEROGENEITY
- *ARSENIDES
- *RARE EARTH ELEMENTS
- *HETEROGENEOUS REACTORS
- COUPLING(INTERACTION)
- CONTROL
- QUANTUM THEORY
- ELECTRON TRANSPORT
- QUANTUM WELLS
- GALLIUM ARSENIDES
- STRUCTURES
- METAL FILMS
- THIN FILMS
- EPITAXIAL GROWTH
- SEMICONDUCTORS
- RESONANCE
- HIGH DENSITY
- QUANTUM ELECTRONICS
- TUNNELING
- MAGNETIZATION
- ELECTRON SPECTROSCOPY
- ISLANDS
Subject Categories:
- Inorganic Chemistry
- Radiofrequency Wave Propagation