Accession Number:

ADA329760

Title:

In-Situ Studies of Metal on III-V Semiconductors

Descriptive Note:

Final rept. 1 May 93-30 Apr 97

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL

Personal Author(s):

Report Date:

1997-04-01

Pagination or Media Count:

8.0

Abstract:

Research has been performed using high resolution electron microscopy under ultra-high vacuum UHV conditions on a number of metal semiconductor systems. The new system combining classical surface characterization techniques and growth has been installed on a UHV microscope and fully tested. The growth at the monolayer level of Au and Ay on Si 001 has been studied combining XPS and electron microscopy. Studies of the growth of Au on both air introduced and Ga-rich GaAs 001 substrates have been performed. A variety of new methodologies and techniques have been developed, most notably atomic scale imaging of surfaces at a higher level than previously possible and new methods of determining surface structures just from electron or x-ray diffraction data. Electron microscopy studies of MoS2 lubricant films are also described.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE