Accession Number:

ADA329732

Title:

Quantum Device Fabricant Based on High Resolution Patterning with Reactive Neutral Beams.

Descriptive Note:

Final rept. 1 Jul 93-30 Jun 97,

Corporate Author:

COLUMBIA UNIV NEW YORK RADIOLOGICAL RESEARCH LAB

Personal Author(s):

Report Date:

1997-08-26

Pagination or Media Count:

7.0

Abstract:

Research performed at Columbia University in which etch-defined features were fabricated in multiple quantum well semiconductor material, is described. Photon-assisted neutral atom etching was demonstrated to produce damage free features in GaAs-based quantum well material. The technique was applied in the fabrication of a single quantum well circular ring laser with low-loss etched sidewalls. The photoluminescence efficiency of magnetron reactive ion etched features was also investigated as a function of rf power and etching time. Low-temperature electron-beam enhanced etching and chemically assisted ion beam etching were characterized and applied to the fabrication of nanometer-sized features in III-V semiconductor material.

Subject Categories:

  • Optics
  • Particle Accelerators

Distribution Statement:

APPROVED FOR PUBLIC RELEASE