Accession Number:

ADA329701

Title:

Studies of Surface Processes during Growth of Epitaxial Boron Nitride

Descriptive Note:

Final rept. 1 Jun 93-31 May 97

Corporate Author:

CARNEGIE-MELLON UNIV PITTSBURGH PA DEPT OF ELECTRICAL AND COMPUTER ENGINEERIN G

Personal Author(s):

Report Date:

1997-07-29

Pagination or Media Count:

27.0

Abstract:

Cubic boron nitride has proven to be a challenging semiconductor to grow epitaxially. In large part this is due to its chemical similarity to diamond in that the hexagonal or graphic sp2-bonded phase often forms at ambient conditions rather than the sp3- bonded form. in this contract, we have investigated the possible formation of sp3- bonded forms of BN on particularly suitable substrates. Both Ni100 and AlN have been studied. A careful study of the Ni100 surface has shown that the hexagonal phase is formed when diborane and ammonia react thermally without ionic bombardment. Work on AlN substrates is less complete but so far no evidence for formation of the sp3-bonded phase has emerged.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE