Accession Number:

ADA329609

Title:

High Power, Broadband, Linear, Solid State Amplifier.

Descriptive Note:

Annual rept. no 1, 1 Sep 96-31 Aug 97,

Corporate Author:

CORNELL UNIV ITHACA NY DEPT OF ELECTRICAL ENGINEERING

Report Date:

1997-09-01

Pagination or Media Count:

48.0

Abstract:

A1GaNGaN MODFETs grown by MBE and OMVPE with less than 25, micrometers gate lengths, yield up to 50 and 100 GHz for fk and fmax respectively. A substantial effort on circuits for combining power, including both direct power combining and traveling wave combining has been started, along with experimental studies of large pheriphery devices. A new analytical model for the effect of dislocations on electron mobility has been made, and electron transport in III-nitrides has been studied using the Monte Carlo method. Epitaxial growth on SiC and sapphire is being carried out by both MBE and OMVPE, and studied by high resolution STEM. Bulk crystallites 250 micrometers in diameter, have been grown and will be used as seeds for growth of larger boules.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE