Optimization of Properties of a New Material for Electronic and Magnetic Applications.
Interim rept. 15 Jul-14 Aug 97,
SKION CORP HOBOKEN NJ
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Several test samples were grown at the City College of New York MBE facility. The exact growth rate is unknown at present, but the nominal thickness are 12.5, 25, and 50 nm MnAs on 100 nm buffer layers of GaAs. The substrate orientations are 001. GaAs buffer layers are p-type with a carrier concentration of 5x10exp 17 cmexp -3 and a thickness of 100 nm. The nominal growth rate of MnAs was 50 nmhour. Flux ratio of AsMn was about 5-10. All the layers were annealed at 400 deg C for 1 minute after the growth the time for increasing growth temperature from 250 to 400 deg C was about 4 minutes. Growth temperatures and growth times for MnAs layers are B94 200C for 7 min. 30 sec., 250C for 42 min. 30 sec. B95 200C for 1 min., 250C for 30 min. and B96 200C for 1 min., 250C for 14 min.
- Electricity and Magnetism
- Solid State Physics