Accession Number:

ADA327529

Title:

Optimization of Properties of a New Material for Electronic and Magnetic Applications.

Descriptive Note:

Interim rept. 14 May-14 Jul 97,

Corporate Author:

SKION CORP HOBOKEN NJ

Personal Author(s):

Report Date:

1997-07-14

Pagination or Media Count:

5.0

Abstract:

The molecular beam epitaxy MBE system is being prepared for the preparation of manganese arsenidegallium arsenide MnAsGaAs composite films. The chamber has been evaluated for quality of the vacuum A pressure in the 10exp -8 Torr range was obtained within hours without bakeout. The bakeable all metal valve connected to the turbo pump was found to leak through the valve seating when the valve was closed. Repairs are being made on the chamber and on the Boostivac ion pump controller. Drawings have been prepared for the effusion cells in the molecular beam source. Professor Tamargo has agreed to provide access to her commercial MBE system to produce large are MnAsGaAs samples. The effusion cells are available for deposition and it will be possible to exactly reproduce the deposition conditions of Rothberg and Harbisons work that was cited in the SBIR proposal. SKION will utilize AES, RHEED and LEED to provide in situ analysis to establish optimal growth parameters.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Coatings, Colorants and Finishes
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE