Accession Number:
ADA327508
Title:
Low Temperature Materials Growth and Processing Development for Flat Panel Display Technology Applications.
Descriptive Note:
Quarterly rept. 15 Feb-15 May 95,
Corporate Author:
OREGON GRADUATE INST BEAVERTON
Personal Author(s):
Report Date:
1995-05-01
Pagination or Media Count:
15.0
Abstract:
A thin catalyst film of nickel 0.4 nm thick on a silicon substrate was reduced in hydrogen at 875 deg C for 30 minutes. Carbon nanotubes were subsequently grown at 950-1000 deg C in less than 5 minutes. A more uniform electron emission was obtained in the vacuum testing station, compared to previous nanotube preparation techniques. Also the Fowler-Nordheim plots were more reproducible.
Descriptors:
Subject Categories:
- Nuclear Physics and Elementary Particle Physics