Accession Number:

ADA327508

Title:

Low Temperature Materials Growth and Processing Development for Flat Panel Display Technology Applications.

Descriptive Note:

Quarterly rept. 15 Feb-15 May 95,

Corporate Author:

OREGON GRADUATE INST BEAVERTON

Personal Author(s):

Report Date:

1995-05-01

Pagination or Media Count:

15.0

Abstract:

A thin catalyst film of nickel 0.4 nm thick on a silicon substrate was reduced in hydrogen at 875 deg C for 30 minutes. Carbon nanotubes were subsequently grown at 950-1000 deg C in less than 5 minutes. A more uniform electron emission was obtained in the vacuum testing station, compared to previous nanotube preparation techniques. Also the Fowler-Nordheim plots were more reproducible.

Subject Categories:

  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE