Accession Number:

ADA326278

Title:

Theory and Simulation of the Structure and Dynamical Properties of Electronic Materials.

Descriptive Note:

Final rept.,

Corporate Author:

VANDERBILT UNIV NASHVILLE TN DEPT OF PHYSICS AND ASTRONOMY

Personal Author(s):

• Pantelides, Sokrates T.

Report Date:

1997-05-27

Pagination or Media Count:

65.0

Abstract:

During the course of this grant, research focused on using available theoretical tools to explore and elucidate complex dynamics of impurities in Si. In particular, we studied clustering of As in heavily doped Si, segregation of As in Si grain boundaries and the migration of oxygen in Si. In addition we carried out atomic scale nonequilibruim heat flow simulations and mesoscopic calculations of void growth in polycrystalline metal lines.

Descriptors:

• *SILICON
• *SOLID STATE CHEMISTRY
• HEAT TRANSFER
• COMPUTATIONS
• IMPURITIES
• VOIDS
• OXYGEN
• MIGRATION
• DOPING
• ARSENIC
• GRAIN BOUNDARIES

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE