Accession Number:

ADA326240

Title:

Research on Silicon-Based Optical Devices.

Descriptive Note:

Final rept. 1 Feb 95-31 Mar 97,

Corporate Author:

CARNEGIE-MELLON UNIV PITTSBURGH PA DEPT OF ELECTRICAL AND COMPUTER ENGINEERIN G

Personal Author(s):

• Greve, D. W.

Report Date:

1997-05-29

Pagination or Media Count:

18.0

Abstract:

Research on the development of infrared detectors using germanium silicon alloys is reported. Structures have been grown using ultra high vacuum chemical vapor deposition UHVCVD. Heterojunction internal photoemission structures have been fabricated and characterized. The results suggest that background limited performance will be obtained at 40 K and below for long wave infrared LWIR operation. Work on multiple quantum well structures has also been completed and is summarized in the report. Remaining issues concern process integration and some progress is reported toward development of a silicide ohmic contact process to these structures. The growth of relaxed buffer layers and short period superlattices have also been explored. Most of the results so far have been on short period superlattices. Characterization by X-ray diffraction and Raman has been performed.

Descriptors:

• *INFRARED DETECTORS
• *SILICON ALLOYS
• *FOCAL PLANE ARRAYS
• QUANTUM WELLS
• HETEROJUNCTIONS
• SUPERLATTICES
• X RAY DIFFRACTION
• EPITAXIAL GROWTH
• INTEGRATED CIRCUITS
• PHOTOELECTRIC EMISSION
• INFRARED RADIATION
• LONG WAVELENGTHS
• NEAR INFRARED RADIATION
• SILICIDES
• GERMANIUM ALLOYS

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE