Accession Number:

ADA326165

Title:

GaInAsP-InP Double Heterostructure Lasers on Si Substrate Grown by LP-MOCVD,

Descriptive Note:

Final rept.,

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL CENTER FOR QUANTUM DEVICES

Personal Author(s):

• Razeghi, Maniheh

Report Date:

1993-01-01

Pagination or Media Count:

128.0

Abstract:

This report summarizes the results of experimental research work on material, processing technology, and laser characterization performed at the Center for Quantum Devices under ONR contract N00014-93-1-0176 GaInAsP-InP double heterostructure lasers on Si substrate grown by MOVCD. In order to achieve this goal of the contract, the CQD research group split the divided research work into three phases with specific tasks Material Growth, and Laser Processing and Laser Characterization. The first phase consists of different approaches in order to increase the quality of the buffer layer and laser material. The second phase consists of the fabrication laser structure on Si substrates based on the peculiarities of structures containing residual structural stress and moderate levels of dislocation density. The third phase consists of the laser characterization of these laser diodes. Each phase contains specific tasks that was used in a systematic way to achieve GaInAsP-InP double heterostructure lasers on Si substrate.

Descriptors:

• *MATERIALS
• *SUBSTRATES
• *LASERS
• *SILICON
• *GALLIUM COMPOUNDS
• FIBER OPTICS
• BUFFERS
• DENSITY
• LAYERS
• STRUCTURAL PROPERTIES
• PROCESSING
• GROWTH(GENERAL)
• SUPERLATTICES
• FILMS
• FABRICATION
• LOW PRESSURE
• ORGANOMETALLIC COMPOUNDS
• CHEMICAL VAPOR DEPOSITION
• SEMICONDUCTOR LASERS
• DISLOCATIONS
• RESIDUAL STRESS
• PHOSPHIDES
• GROUP III COMPOUNDS
• GROUP IV COMPOUNDS
• GROUP V COMPOUNDS
• QUANTUM ELECTRONICS
• CONFINEMENT(GENERAL)
• INDIUM PHOSPHIDES
• ARSENIC
• LASER MATERIALS
• DIODE LASERS

Subject Categories:

• Inorganic Chemistry
• Lasers and Masers
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE