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Vapour Phase Growth of Thick Monocrystalline GaN Epitaxial Layers by Sandwich-Method.
Interim rept. no. 1, 22 Aug-1 Dec 96,
JOINT STOCK CO AGENCY FOR SCIENCE AND TECHNOLOGY SAINT PETERSBURG (RUSSIA)
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We have modified a setup for growing GaN heteroepitaxial layers of large area and obtained 20 such structures on silicon carbide SiC and sapphire Al2O3 substrates of 8 mm2 in size 50-150 micrometers thickness by Sublimation Sandwich Method SSM. The substrates have been analysed for optimal GaN layer growth conditions, using the available data, and the results indicated that hexagonal SiC alpha-SiC is the best material. The substrateepilayer mismatches may be reduced by using Al-doped substrates pre-irradiated by high energy particles. We have studied the characteristics and structural quality of GaN layers deposited on SiC substrates, using X-ray diffractometry. The rocking curve measurements of GaN layers yielded the full width at the half maximum FWHM of 150 arc.sec. The manganese impurity was first observed and identified in GaN crystals grown by sublimation sandwich method by electron paramagnetic resonance.
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