Accession Number:

ADA324907

Title:

Theoretical Modeling of Linear Absorption Coefficients in Si/Si1-xGex Multiple Quantum Well Photodetectors.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1996-12-01

Pagination or Media Count:

120.0

Abstract:

SiSisub1-xGesubx MQW Infrared Photodetectors offer the promise of normal incidence photodetection tunable over the range of 3-12 micrometers wavelength range at temperatures above 40 K. This system is aftractive because the Sisub1-xGesubx offers greater compatibility with existing Si based signal processing circuitry. Band structures, momentum matrix elements and linear absorption coefficients are computed using a Luftinger-Kohn kp analysis for SiSisub1-xGesubx quantum wells grown in the 110 direction. The absorption coefficient as a function of energy and wavelength is calculated by two methods a delta function fit to intersubband transitions, and a Lorentzian fit to intersubband transitions. Calculations were performed for parallel as well as normally incident radiation and the resulting absorption spectra are in good agreement with experimental observations.

Subject Categories:

  • Solid State Physics
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE