Theoretical Modeling of Linear Absorption Coefficients in Si/Si1-xGex Multiple Quantum Well Photodetectors.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH
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SiSisub1-xGesubx MQW Infrared Photodetectors offer the promise of normal incidence photodetection tunable over the range of 3-12 micrometers wavelength range at temperatures above 40 K. This system is aftractive because the Sisub1-xGesubx offers greater compatibility with existing Si based signal processing circuitry. Band structures, momentum matrix elements and linear absorption coefficients are computed using a Luftinger-Kohn kp analysis for SiSisub1-xGesubx quantum wells grown in the 110 direction. The absorption coefficient as a function of energy and wavelength is calculated by two methods a delta function fit to intersubband transitions, and a Lorentzian fit to intersubband transitions. Calculations were performed for parallel as well as normally incident radiation and the resulting absorption spectra are in good agreement with experimental observations.
- Solid State Physics
- Infrared Detection and Detectors